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AS4C16M16S-7TCN PDF预览

AS4C16M16S-7TCN

更新时间: 2024-02-28 23:31:54
品牌 Logo 应用领域
ALLIED 时钟动态存储器ISM频段光电二极管内存集成电路
页数 文件大小 规格书
55页 1954K
描述
16MX16 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOPII-54

AS4C16M16S-7TCN 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TSOP2包装说明:0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOPII-54
针数:54Reach Compliance Code:compliant
风险等级:5.66访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G54长度:22.22 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

AS4C16M16S-7TCN 数据手册

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FEBRUARY 2011  
AS4C16M16S  
256Mb / 16M x 16 bit Synchronous DRAM (SDRAM)  
Operation Mode  
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 4 shows the  
truth table for the operation commands.  
Table 4. Truth Table (Note (1), (2))  
CKEn-1 CKEn  
Command State  
DQM BA0,1 A10 A0-9,12 CS# RAS# CAS# WE#  
Idle(3)  
Any  
H
H
H
H
H
H
H
H
H
H
H
H
H
L
X
X
X
X
X
X
X
X
X
X
X
H
L
X
X
X
V
V
V
V
X
X
X
X
X
X
X
V
V
X
V
V
V
V
Row address  
L
L
L
L
L
L
L
L
L
L
H
L
L
H
L
H
L
H
L
X
H
L
X
X
L
L
H
H
BankActivate  
BankPrecharge  
PrechargeAll  
L
H
L
X
X
H L  
H L  
L
Any  
L
Active(3)  
Active(3)  
Active(3)  
Active(3)  
Idle  
H
H
H
H
L
L
L
Write  
Column  
address  
(A0 ~ A8)  
Write and AutoPrecharge  
Read  
H
L
L
Column  
address  
(A0 ~ A8)  
L H  
L H  
L L  
H H  
H
Read and Autoprecharge  
Mode Register Set  
No-Operation  
H
OP code  
Any  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
X
L
Active(4)  
Any  
L
Burst Stop  
Device Deselect  
AutoRefresh  
X X  
L
Idle  
H
H
SelfRefresh Entry  
SelfRefresh Exit  
Idle  
L
L
Idle  
H
X
H
X
V
X
H
X
X
H
X
X
X X  
H H  
X X  
V V  
X X  
H H  
X X  
X X  
H H  
X
(SelfRefresh)  
Clock Suspend Mode Entry  
Power Down Mode Entry  
Active  
Any(5)  
Active  
H
H
L
L
X
X
X
X
X
X
X
X
Clock Suspend Mode Exit  
Power Down Mode Exit  
L
L
H
H
X
X
X
X
X
X
X
X
Any  
(PowerDown)  
Data Write/Output Enable  
Data Mask/Output Disable  
Active  
Active  
H
H
X
X
L
X
X
X
X
X
X
X
X
H
X
Note: 1. V=Valid, X=Don't Care L=Low level H=High level  
2. CKEn signal is input level when commands are provided.  
CKEn-1 signal is input level one clock cycle before the commands are provided.  
3. These are states of bank designated by BA signal.  
4. Device state is 1, 2, 4, 8, and full page burst operation.  
5. Power Down Mode cannot enter in the burst operation.  
When this command is asserted in the burst cycle, device state is clock suspend mode.  
5

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