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AS29LV800B-90SC PDF预览

AS29LV800B-90SC

更新时间： 2024-01-02 07:18:39
品牌 Logo 应用领域
ANADIGICS 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
25页 440K
描述
3V 1M】8/512K】16 CMOS Flash EEPROM

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中文翻译

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AS29LV800B-90SC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：TSOP1, TSSOP48,.8,20
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.76Is Samacsys：N
最长访问时间：90 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：1,2,1,15
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：16K,8K,32K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.1 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AS29LV800B-90SC 数据手册

 浏览型号AS29LV800B-90SC的Datasheet PDF文件第7页浏览型号AS29LV800B-90SC的Datasheet PDF文件第8页浏览型号AS29LV800B-90SC的Datasheet PDF文件第9页浏览型号AS29LV800B-90SC的Datasheet PDF文件第11页浏览型号AS29LV800B-90SC的Datasheet PDF文件第12页浏览型号AS29LV800B-90SC的Datasheet PDF文件第13页 
AS29LV800  
March 2001  
®
Status operations  
Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects  
complement of data last written when read during the automated on-chip program algorithm (0  
during erase algorithm); reflects true data when read after completion of an automated on-chip  
program algorithm (1 after completion of erase agorithm).  
DATA polling (DQ7)  
Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when CE or OE  
toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth  
pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;  
after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors,  
DQ6 toggles for <1 µs during program mode writes, and <5 µs during erase (if all selected sectors  
are protected).  
Toggle bit 1 (DQ6)  
Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains  
active. If DQ5 = 1 during chip erase, all or some sectors are defective; during byte programming or  
sector erase, the sector is defective (in this case, reset the device and execute a program or erase  
command sequence to continue working with functional sectors). Attempting to program 0 to 1  
will set DQ5 = 1.  
Exceeding time limit  
(DQ5)  
Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands  
will be accepted. If DQ3 = 0, the device will accept sector erase commands. Check DQ3 before and  
after each Sector Erase command to verify that the command was accepted.  
Sector erase timer  
(DQ3)  
During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being  
erased. During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles  
only at sector addresses where failure occurred, and will not toggle at other sector addresses. Use  
DQ2 in conjunction with DQ6 to determine whether device is in auto erase or erase suspend  
mode.  
Toggle bit 2 (DQ2)  
Write operation status  
Status  
DQ7  
DQ7  
0
DQ6  
DQ5  
DQ3  
N/A  
1
DQ2  
RY/BY  
Auto programming  
Toggle  
Toggle  
No toggle  
Data  
0
No toggle  
Toggle†  
Toggle  
0
0
1
1
0
1
1
Standard mode  
Program/erase in auto erase  
Read erasing sector  
0
1
0
N/A  
Data  
N/A  
N/A  
N/A  
Erase suspend mode  
Read non-erasing sector  
Program in erase suspend  
Auto programming (byte)  
Program/erase in auto erase  
Data  
DQ7  
DQ7  
0
Data  
0
Data  
Toggle  
Toggle  
Toggle  
Toggle†  
No toggle  
Toggle†  
1
1
Exceeded time limits  
Program in erase suspend  
DQ7  
Toggle  
1
N/A  
No toggle  
1
(non-erase suspended sector)  
DQ2 toggles when an erase-suspended sector is read repeatedly.  
DQ6 toggles when any address is read repeatedly.  
DQ2 = 1 if byte address being programmed is read during erase-suspend program mode.  
†
DQ2 toggles when the read address applied points to a sector which is undergoing erase, suspended erase, or a failure to erase.  
3/22/01; V.1.0  
Alliance Semiconductor  
P. 10 of 25  
1...78910111213...25

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