Datasheet > AS29LV800B-90SC

AS29LV800B-90SC

更新时间： 2024-02-24 16:36:57

品牌	Logo	应用领域
ANADIGICS		闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
25页	440K
描述
3V 1M】8/512K】16 CMOS Flash EEPROM

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AS29LV800B-90SC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP1	包装说明：	TSOP1, TSSOP48,.8,20
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.76	Is Samacsys：	N
最长访问时间：	90 ns	备用内存宽度：	8
启动块：	BOTTOM	命令用户界面：	YES
数据轮询：	YES	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G48	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	8388608 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,15
端子数量：	48	字数：	524288 words
字数代码：	512000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	512KX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP48,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	240
电源：	3/3.3 V	编程电压：	3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1.2 mm	部门规模：	16K,8K,32K,64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.1 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	YES	类型：	NOR TYPE
宽度：	12 mm	Base Number Matches：	1

AS29LV800B-90SC 数据手册

March 2001

AS29LV800

Command definitions

Item

Description

Initiate read or reset operations by writing the Read/Reset command sequence into the command

mode until command register contents are altered.

Reset/Read

Device automatically powers up in read/reset state. This feature allows only reads, therefore

ensuring no spurious memory content alterations during power up.

AS29LV800 provides manufacturer and device codes in two ways. External PROM programmers

typically access the device codes by driving +10V on A9. AS29LV800 also contains an ID Read

command to read the device code with only +3V, since multiplexing +10V on address lines is

generally undesirable.

Initiate device ID read by writing the ID Read command sequence into the command register.

Follow with a read sequence from address XXX00h to return MFR code. Follow ID Read command

sequence with a read sequence from address XXX01h to return device code.

ID Read

To verify write protect status on sectors, read address XXX02h. Sector addresses A18–A12 produce

a 1 on DQ0 for protected sector and a 0 for unprotected sector.

Exit from ID read mode with Read/Reset command sequence.

Holding RESET low for 500 ns resets the device, terminating any operation in progress; data

handled in the operation is corrupted. The internal state machine resets 20 µs after RESET is driven

low. RY/BY remains low until internal state machine resets. After RESET is set high, there is a delay

of 50 ns for the device to permit read operations.

Hardware Reset

Programming the AS29LV800 is a four bus cycle operation performed on a byte-by-byte or word-

by-word basis. Two unlock write cycles precede the Program Setup command and program data

write cycle. Upon execution of the program command, no additional CPU controls or timings are

necessary. Addresses are latched on the falling edge of CE or WE, whichever is last; data is latched

on the rising edge of CE or WE, whichever is first. The AS29LV800’s automated on-chip program

algorithm provides adequate internally-generated programming pulses and verifies the

programmed cell margin.

Check programming status by sampling data on the RY/BY pin, or either the DATA polling (DQ7)

or toggle bit (DQ6) at the program address location. The programming operation is complete if

DQ7 returns equivalent data, if DQ6 = no toggle, or if RY/BY pin = high.

Byte/word

Programming

The AS29LV800 ignores commands written during programming. A hardware reset occurring

during programming may corrupt the data at the programmed location.

AS29LV800 allows programming in any sequence, across any sector boundary. Changing data from

0 to 1 requires an erase operation. Attempting to program data 0 to 1 results in either DQ5 = 1

(exceeded programming time limits); reading this data after a read/reset operation returns a 0.

When programming time limit is exceeded, DQ5 reads high, and DQ6 continues to toggle. In this

state, a Reset command returns the device to read mode.

3/22/01; V.1.0

Alliance Semiconductor

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