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AS29LV016JBRGR-70/XT PDF预览

AS29LV016JBRGR-70/XT

更新时间: 2024-02-16 18:23:02
品牌 Logo 应用领域
AUSTIN 闪存内存集成电路
页数 文件大小 规格书
40页 408K
描述
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

AS29LV016JBRGR-70/XT 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TSOP1包装说明:TSOP1, TSSOP56,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.2Is Samacsys:N
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-XDSO-G48
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,31
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:1MX16封装主体材料:UNSPECIFIED
封装代码:TSOP1封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AS29LV016JBRGR-70/XT 数据手册

 浏览型号AS29LV016JBRGR-70/XT的Datasheet PDF文件第31页浏览型号AS29LV016JBRGR-70/XT的Datasheet PDF文件第32页浏览型号AS29LV016JBRGR-70/XT的Datasheet PDF文件第33页浏览型号AS29LV016JBRGR-70/XT的Datasheet PDF文件第35页浏览型号AS29LV016JBRGR-70/XT的Datasheet PDF文件第36页浏览型号AS29LV016JBRGR-70/XT的Datasheet PDF文件第37页 
COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
tCH  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
High Z  
DQ7  
Valid Data  
Complement  
Complement  
True  
High Z  
DQ0–DQ6  
Status Data  
True  
Valid Data  
Status Data  
tBUSY  
RY/BY#  
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and  
array data read cycle.  
Figure 18. Data# Polling Timings (During Embedded Algorithms)  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
VA  
tCH  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
High Z  
DQ6/DQ2  
RY/BY#  
Valid Status  
(first read)  
Valid Status  
Valid Status  
Valid Data  
(second read)  
(stops toggling)  
tBUSY  
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last  
status read cycle, and array data read cycle.  
Figure 19. Toggle Bit Timings (During Embedded Algorithms)  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
34  

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