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AS29F400T-90SC PDF预览

AS29F400T-90SC

更新时间： 2024-02-06 16:06:24
品牌 Logo 应用领域
ALSC 光电二极管内存集成电路
页数 文件大小 规格书
20页 444K
描述
Flash, 512KX8, 90ns, PDSO44, 0.600 INCH, SO-44

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中文翻译

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AS29F400T-90SC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：0.600 INCH, SO-44
针数：44Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.92最长访问时间：90 ns
其他特性：10K WRITE/ERASE CYCLE ENDURANCE; ALSO CONFIGURABLE AS 256K X 16备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：YES耐久性：10000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G44JESD-609代码：e0
长度：28.2 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：1,2,1,7
端子数量：44字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP44,.63封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：2.8 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.05 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：13.3 mm
Base Number Matches：1

AS29F400T-90SC 数据手册

 浏览型号AS29F400T-90SC的Datasheet PDF文件第5页浏览型号AS29F400T-90SC的Datasheet PDF文件第6页浏览型号AS29F400T-90SC的Datasheet PDF文件第7页浏览型号AS29F400T-90SC的Datasheet PDF文件第9页浏览型号AS29F400T-90SC的Datasheet PDF文件第10页浏览型号AS29F400T-90SC的Datasheet PDF文件第11页 
AS29F400  
Preliminary information  
®
Status operations  
Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects  
complement of data last written when read during the automated on-chip algorithm (0 during  
erase algorithm); reflects true data when read after completion of an automated on-chip algorithm  
(1 after completion of erase agorithm).  
DATA polling (DQ7)  
Active during automated on-chip algorithms or sector time outs. DQ6 toggles when CE or OE  
toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth  
pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;  
after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors,  
DQ6 toggles for <1 µs during writes, and <5 µs during erase (if all selected sectors are protected);  
in both cases, data is unaffected.  
Toggle bit 1 (DQ6)  
Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains  
active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are  
defective; during sector erase, the sector is defective (in this case, reset the device and execute a  
program or erase command sequence to continue working with functional sectors); during byte  
programming, that particular byte is defective. Attempting to program 0 to 1 will set DQ5 = 1.  
Exceeding time limit  
(DQ5)  
Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands  
will be accepted. If DQ3 = 0, the device will accept sector erase commands. Check DQ3 before and  
after each Sector Erase command to verify that the command was accepted.  
Sector erase timer  
(DQ3)  
During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being  
erased. During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles  
only at sector addresses where failure occurred, and will not toggle at other sector addresses. Use  
DQ2 in conjunction with DQ6 to determine whether device is in auto erase or erase suspend  
mode.  
Toggle bit 2 (DQ2)  
Write operation status  
Status  
DQ7  
DQ6  
DQ5  
0
DQ3  
0
DQ2  
RY/BY  
Auto programming (byte/word) DQ7  
Toggle  
Toggle  
No toggle  
No toggle  
0
0
1
†
Program/erase in auto erase  
Read erasing sector  
0
1
0
1
Toggle  
0
0
Toggle  
In progress  
Erase  
suspend  
mode  
Read non-erasing  
sector  
Data  
DQ7  
Data  
Data  
0
Data  
0
Data  
1
0
Program in erase  
suspend  
†
Toggle  
Toggle  
Auto programming (byte/word) DQ7  
Toggle  
Toggle  
Toggle  
1
1
1
0
1
0
No toggle  
0
0
0
‡
Exceeded time limits  
Program/erase in auto erase  
Program in erase suspend  
0
Toggle  
‡
DQ7  
Toggle  
†
Toggles with OE or CE only for erasing or erase suspended sector addresses.  
‡
Toggles only if DQ5 = 1 and address applied is within sector that exceeded timing limits.  
DQ8–DQ15 = Don’t care in ×16 mode.  
8
1...567891011...20

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