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AS29F400T-90SC PDF预览

AS29F400T-90SC

更新时间: 2024-02-18 18:29:42
品牌 Logo 应用领域
ALSC 光电二极管内存集成电路
页数 文件大小 规格书
20页 444K
描述
Flash, 512KX8, 90ns, PDSO44, 0.600 INCH, SO-44

AS29F400T-90SC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.600 INCH, SO-44
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92最长访问时间:90 ns
其他特性:10K WRITE/ERASE CYCLE ENDURANCE; ALSO CONFIGURABLE AS 256K X 16备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,7
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:2.8 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

AS29F400T-90SC 数据手册

 浏览型号AS29F400T-90SC的Datasheet PDF文件第2页浏览型号AS29F400T-90SC的Datasheet PDF文件第3页浏览型号AS29F400T-90SC的Datasheet PDF文件第4页浏览型号AS29F400T-90SC的Datasheet PDF文件第6页浏览型号AS29F400T-90SC的Datasheet PDF文件第7页浏览型号AS29F400T-90SC的Datasheet PDF文件第8页 
AS29F400  
Preliminary information  
®
READ codes  
Mode  
A17–A12  
A6  
L
A1  
L
A0  
L
Code  
MFR code (Alliance Semiconductor)  
X
X
X
X
X
52h  
×8 T boot  
×8 B boot  
×16 T boot  
×16 B boot  
L
L
H
H
H
H
23h  
L
L
ABh  
Device code  
L
L
2223h  
22ABh  
L
L
01h protected  
00h unprotected  
Sector protection  
Sector address  
L
H
L
Key: L =Low (<VIL); H = High (>VIH); X =Don’t care; T = top; B = bottom  
Command format  
1st bus write cycle 2nd bus write cycle 3rd bus write cycle  
4th bus write cycle  
5th bus write cycle 6th bus write cycle  
Required  
bus cycles Address  
Command sequence  
Reset/Read  
Data  
F0h  
Address  
Data  
Address  
Data  
Address  
Data  
Address Data Address  
Data  
Read  
Address  
1
4
XXXXh  
Read Data  
×16  
Reset/Read  
×8  
5555h  
AAAAh  
2AAAh  
5555h  
5555h  
AAAAh  
Read  
Data  
AAh  
AAh  
55h  
55h  
F0h  
Read Address  
2223h  
(T)  
22ABh (B)  
×16  
5555h  
AAAAh  
2AAAh  
5555h  
5555h  
AAAAh  
01h  
Device code  
23h (T)  
ABh (B)  
×8  
AutoselectI  
4
90h  
D Read  
00h  
52h  
MFR code  
×16/×8  
XXX02h  
01 = protected  
Sector protection  
00 = unprotected  
×16  
×8  
5555h  
AAAAh  
5555h  
AAAAh  
5555h  
AAAAh  
XXXXh  
XXXXh  
2AAAh  
5555h  
2AAAh  
5555h  
2AAAh  
5555h  
5555h  
AAAAh  
5555h  
AAAAh  
5555h  
AAAAh  
Program  
Address  
Program  
Data  
Program  
4
6
6
AAh  
AAh  
AAh  
55h  
55h  
55h  
A0h  
80h  
80h  
×16  
×8  
5555h  
AAAAh  
5555h  
AAAAh  
2AAAh  
5555h  
AAAAh  
Chip Erase  
Sector Erase  
AAh  
AAh  
55h  
55h  
10h  
30h  
5555h  
2AAAh  
5555h  
×16  
×8  
Sector  
Address  
Sector Erase Suspend  
Sector Erase Resume  
1
1
B0h  
30h  
1
2
3
4
5
6
Bus operations defined in "Mode definitions," on page 3.  
Reading from and programming to non-erasing sectors allowed in Erase Suspend mode.  
Address bit A15 = X = Don’t care for all address commands except Program Address and Sector Address.  
Address bit A16 = X = Don’t care for all address commands except Program Address and Sector Address.  
Address bit A17 = X = Don’t care for all address commands except Program Address and Sector Address.  
System should generate address patterns: ×16 mode - 5555h or 2AAAh to addresses A0–A14; ×8 mode - AAAAh or 5555h to addresses A-1–A14.  
5

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