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AS29LV016BRG-100/XT PDF预览

AS29LV016BRG-100/XT

更新时间: 2024-02-16 19:20:19
品牌 Logo 应用领域
AUSTIN 闪存内存集成电路光电二极管
页数 文件大小 规格书
40页 402K
描述
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

AS29LV016BRG-100/XT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.25Is Samacsys:N
最长访问时间:100 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e4长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.035 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:PALLADIUM GOLD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AS29LV016BRG-100/XT 数据手册

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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016  
16 Megabit (2M x 8-Bit / 1M x 16-Bit)  
CMOS 3.0 Volt-Only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
PERFORMANCE CHARACTERISTICS  
„ High performance  
„ Commercial Off The Shelf, up-screened device  
— Access times as fast as 70 ns @ Enhanced  
Temp [/ET]  
„ Single power supply operation  
— Full voltage range: 2.7 to 3.6 volt read and write  
— Extended temp range available [/XT] (-55°C to  
+125°C)  
operations for battery-powered applications  
„ Manufactured on 200nm process technology  
„ Flexible sector architecture  
„ Ultra low power consumption (typical values at  
5 MHz)  
— 200 nAAutomatic Sleep mode current  
— 200 nA standby mode current  
— 9 mA read current  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
thirty-one 64 Kbyte sectors (byte mode)  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
thirty-one 32 Kword sectors (word mode)  
— 20 mA program/erase current  
„ Sector Protection features  
„ Cycling endurance: 1,000,000 cycles per sector  
typical  
„ Data retention: 20 years typical  
— A hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
— Sectors can be locked in-system or via  
programming equipment  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
SOFTWARE FEATURES  
„ CFI (Common Flash Interface) compliant  
— Provides device-specific information to the  
system, allowing host software to easily  
reconfigure for different Flash devices  
„ Unlock Bypass Program Command  
— Reduces overall programming time when issuing  
multiple program command sequences  
„ Top or bottom boot block configurations  
available  
„ Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
„ Compatibility with JEDEC standards  
— Pinout and software compatible with single-power  
supply Flash  
„ Data# Polling and toggle bits  
— Superior inadvertent write protection  
— Provides a software method of detecting program  
or erase operation completion  
PACKAGE OPTIONS  
HARDWARE FEATURES  
„ 48-pin TSOP1  
„ Ready/Busy# pin (RY/BY#)  
— Provides a hardware method of detecting program  
or erase cycle completion  
„ Hardware reset pin (RESET#)  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016  
Rev. 2.1 10/08  
1

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