Datasheet > APTGF500U60D4G

APTGF500U60D4G

更新时间： 2025-08-27 19:03:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
3页	199K
描述
IGBT MODULE 600V 625A 2000W D4

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中文翻译

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数据手册

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APTGF500U60D4G 数据手册

APTGF500U60D4

V_CES= 600V

Single switch

I_C= 500A @ Tc = 80°C

NPT IGBT Power Module

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Non Punch Through (NPT) fast IGBT

Low voltage drop

Low tail current

Switching frequency up to 50 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Low stray inductance

M6 connectors for power

M4 connectors for signal

•

High level of integration

Benefits

•

Outstanding performance at high frequency

operation

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

625

500

900

±20

2000

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_j= 125°C

RBSOA Reverse Bias Safe Operation Area

900A@520V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

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APT website – http://www.advancedpower.com

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