APT6045BN-GULLWING

更新时间： 2024-11-25 13:05:39

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美高森美 - MICROSEMI		晶体晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
4页	133K
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APT6045BN-GULLWING 数据手册

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APT6045BVFR

APT6045SVFR

APT6045BVFRG APT6045SVFRG

600V 15A 0.45 Ω

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

BVFR

POWER MOS V^®FREDFET

Power MOS V^®is a new generation of high voltage N-Channel enhance-

ment mode power MOSFETs. This new technology minimizes the JFET ef-

fect, increases packing density and reduces the on-resistance. Power MOS

D³PAK

V^®also achieves faster switching speeds through optimized gate layout.

SVFR

• Faster Switching

• Lower Leakage

• Avalanche Energy Rated

•

FAST RECOVERY BODY DIODE

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

APT6045B_SVFR(G)

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

600

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

250

2.0

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

T_J,T_STGOperating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

T_L

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

960

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

Volts

MIN

TYP

MAX

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250μA)

600

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 7.5A)

Ohms

0.45

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

μA

I_GSS

Volts

V_GS(th)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4

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