Datasheet > APT6020B2VFRG

APT6020B2VFRG

更新时间： 2024-11-22 04:02:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	116K
描述
Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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APT6020B2VFRG 数据手册

APT6020B2VFR

APT6020LVFR

600V 30A 0.200Ω

B2VFR

POWER MOS V^®FREDFET

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

TO-264

LVFR

• Fast Recovery Body Diode

• Lower Leakage

• Avalanche Energy Rated

• T-MAX™ or TO-264 Package

• Faster Switching

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT6020B2VFR_LVFR

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

120

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

450

P_D

3.60

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1600

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

600

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.200

250

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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与APT6020B2VFRG相关器件

型号	品牌	获取价格	描述	数据表
APT6020LVFR	ADPOW	获取价格	POWER MOS V FREDFET
APT6020LVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
APT6020LVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6020LVR	MICROSEMI	获取价格	Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
APT6020LVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
APT6021BFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6021BFLL_04	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6021BLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6021BLL_04	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6021BLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 29A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Met

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