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APT6021SFLL PDF预览

APT6021SFLL

更新时间: 2024-11-20 22:22:03
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
2页 75K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT6021SFLL 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
风险等级:5.71Is Samacsys:N
雪崩能效等级(Eas):1300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):29 A最大漏极电流 (ID):29 A
最大漏源导通电阻:0.21 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
最大脉冲漏极电流 (IDM):116 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT6021SFLL 数据手册

 浏览型号APT6021SFLL的Datasheet PDF文件第2页 
APT6021BFLL  
APT6021SFLL  
600V 29A 0.210W  
TM  
BFLL  
FREDFET  
POWER MOS 7  
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)  
and Qg. Power MOS 7TM combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
D3PAK  
TO-247  
SFLL  
D
• Lower Input Capacitance  
• Lower Miller Capacitance  
• Lower Gate Charge, Qg  
• IncreasedPowerDissipation  
• Easier To Drive  
• TO-247 or Surface Mount D3PAK Package  
G
S
FAST RECOVERY BODY DIODE  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT6021  
600  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
Volts  
Continuous Drain Current @ TC = 25°C  
29  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
116  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
Watts  
W/°C  
400  
PD  
3.20  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
29  
1
EAR  
EAS  
30  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
1300  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
600  
29  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
µA  
0.210  
250  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 1mA)  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
Chemin de Magret  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
EUROPE  

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