是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
风险等级: | 5.71 | Is Samacsys: | N |
雪崩能效等级(Eas): | 1300 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 29 A | 最大漏极电流 (ID): | 29 A |
最大漏源导通电阻: | 0.21 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 400 W |
最大脉冲漏极电流 (IDM): | 116 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT6021SLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6021SLLG | MICROSEMI |
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Power Field-Effect Transistor, 29A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Met | |
APT6025BFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6025BFLL_04 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6025BFLLG | MICROSEMI |
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Power Field-Effect Transistor, 24A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
APT6025BLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6025BLL_04 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6025BLLG | MICROSEMI |
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Power Field-Effect Transistor, 24A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
APT6025BVFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT6025BVFR_05 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |