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APT31M100L PDF预览

APT31M100L

更新时间: 2024-11-07 04:32:47
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 382K
描述
N-Channel MOSFET

APT31M100L 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-264AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:1.69其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):1875 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (ID):32 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified表面贴装:NO
端子面层:PURE MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT31M100L 数据手册

 浏览型号APT31M100L的Datasheet PDF文件第2页浏览型号APT31M100L的Datasheet PDF文件第3页浏览型号APT31M100L的Datasheet PDF文件第4页 
APT31M100B2  
APT31M100L  
1000V, 31A, 0.40Ω Max  
N-Channel MOSFET  
T-MaxTM  
TO-264  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
A proprietary planar stripe design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in flyback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
APT31M100B2  
APT31M100L  
G
D
S
Single die MOSFET  
FEATURES  
TYPICAL APPLICATIONS  
• PFC and other boost converter  
• Fast switching with low EMI/RFI  
• Buck converter  
• Low RDS(on)  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra low Crss for improved noise immunity  
• Low gate charge  
• Avalanche energy rated  
• RoHS compliant  
• Inverters  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
31  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 100°C  
20  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
120  
±30  
1875  
16  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
1040  
0.12  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
0.11  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
150  
300  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 10 Seconds (1.6mm from case)  
oz  
g
0.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Mounting Torque ( TO-264 Package), 4-40 or M3 screw  
1.1  
Microsemi Website - http://www.microsemi.com  

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