APT31N60BCSG

更新时间： 2024-11-27 08:33:23

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	397K
描述
Super Junction MOSFET

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数据手册

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APT31N60BCSG 数据手册

600V 31A 0.100Ω

APT31N60BCS

APT31N60SCS

APT31N60BCSG* APT31N60SCSG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Super Junction MOSFET

(B)

COOLMOS

Power Semiconductors

D³PAK

• Ultra Low R_DS(ON)

(S)

• Low Miller Capacitance

• Ultra Low Gate Charge, Q

• Avalanche Energy Rated

• Extreme

Rated

• Popular TO-247 or Surface Mount D³Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

APT31N60B_SCS(G)

UNIT

V_DSS

Volts

Drain-Source Voltage

600

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Amps

I_DM

Pulsed Drain Current

V_GS

Volts

Watts

W/°C

Gate-Source Voltage Continuous

±30

255

Total Power Dissipation @ T_C= 25°C

P_D

Linear Derating Factor

2.00

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

MOSFET dv/dt Ruggedness (V_DS= 480V)

-55 to 150

260

°C

V/ns

I_AR

E_AR

E_AS

Avalanche Current

Amps

Repetitive Avalanche Energy

1.2

800

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

V_(BR)DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

600

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 18A)

0.100 Ohms

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V, T_C= 150°C)

Gate-Source Leakage Current (V_GS= ±20V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.2mA)

µA

I_DSS

TBD

I_GSS

±100

3.9

V_GS(th)

2.1

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

"COOLMOS™ comprise a new family of transistors developed by Inﬁneon Technologies AG. "COOLMOS" is a trade-

mark of Inﬁneon Technologies AG."

12 3 4 5

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