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APT30DC120HJ PDF预览

APT30DC120HJ

更新时间: 2024-11-20 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 电源电路整流二极管桥式整流二极管局域网
页数 文件大小 规格书
3页 71K
描述
ISOTOP SiC Diode Full Bridge Power Module

APT30DC120HJ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:ISOTOP包装说明:R-XUFM-X4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.84
Is Samacsys:N其他特性:LOW NOISE
最小击穿电压:1200 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON CARBIDE
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.8 V
JESD-30 代码:R-XUFM-X4最大非重复峰值正向电流:370 A
元件数量:4相数:1
端子数量:4最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:1200 V子类别:Bridge Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

APT30DC120HJ 数据手册

 浏览型号APT30DC120HJ的Datasheet PDF文件第2页浏览型号APT30DC120HJ的Datasheet PDF文件第3页 
APT30DC120HJ  
ISOTOP® SiC Diode  
Full Bridge Power Module  
VRRM = 1200V  
IC = 30A @ Tc = 100°C  
Application  
Switch mode power supplies rectifier  
Induction heating  
Welding equipment  
High speed rectifiers  
Features  
SiC Schottky Diode  
- Zero reverse recovery  
- Zero forward recovery  
- Temperature Independent switching behavior  
- Positive temperature coefficient on VF  
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
+
~
Benefits  
Outstanding performance at high frequency operation  
Low losses  
Low noise switching  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
RoHS Compliant  
~
-
ISOTOP®  
Absolute maximum ratings  
Symbol  
VR  
Parameter  
Maximum DC reverse Voltage  
Max ratings  
Unit  
1200  
V
VRRM  
Maximum Peak Repetitive Reverse Voltage  
Maximum Average Forward Current  
IF(AV)  
IFSM  
Duty cycle = 50% TC = 100°C  
30  
A
TC = 25°C  
Non-Repetitive Forward Surge Current  
10 µs  
370  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 3  
www.microsemi.com  

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