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APT30DL60BCT PDF预览

APT30DL60BCT

更新时间: 2024-11-06 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
4页 132K
描述
Ultrasoft Recovery Rectifi er Diode

APT30DL60BCT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-247AD
包装说明:TO-247, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
其他特性:HIGH RELIABILITY, LOW NOISE, LOW LEAKAGE CURRENT应用:ULTRA SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.6 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大非重复峰值正向电流:320 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.317 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

APT30DL60BCT 数据手册

 浏览型号APT30DL60BCT的Datasheet PDF文件第2页浏览型号APT30DL60BCT的Datasheet PDF文件第3页浏览型号APT30DL60BCT的Datasheet PDF文件第4页 
APT30DL60BCT(G)  
600V 30A  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Ultrasoft Recovery Rectier Diode  
PRODUCT APPLICATIONS  
PRODUCT BENEFITS  
PRODUCT FEATURES  
• Soft Switching - High Q  
rr  
• Ultrasoft Recovery Times (t  
)
• Anti-Parallel Diode  
-Switchmode Power Supply  
rr  
• Low Noise Switching  
- Reduced Ringing  
• Popular TO-247 Package or  
-Inverters  
Surface Mount D3PAK Package  
• Ultra Low Forward Voltage  
• Low Leakage Current  
• Applications  
• Higher Reliability Systems  
- Induction Heating  
• Minimizes or eliminates  
snubber  
1
3
• Resonant Mode Circuits  
-ZVS and ZCS Topologies  
- Phase Shifted Bridge  
2
1 - Anode 1  
2 - Common Cathode  
Back of Case -Cathode  
3 - Anode 2  
MAXIMUM RATINGS  
All Ratings per leg: T = 25°C unless otherwise specied.  
C
Symbol Characteristic / Test Conditions  
Ratings  
Unit  
Maximum D.C. Reverse Voltage  
VR  
VRRM  
VRWM  
IF(AV)  
Maximum Peak Repetitive Reverse Voltage  
Maximum Working Peak Reverse Voltage  
600  
Volts  
Maximum Average Forward current (TC = 126°C, Duty Cycle = 0.5)  
RMS Forward Currrent (Square wave, 50% duty)  
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)  
Operating and Storage Junction Temperature Range  
Lead Temperature for 10 Seconds  
30  
51  
IF(RMS)  
IFSM  
Amps  
°C  
320  
TJ, TSTG  
TL  
-55 to 175  
300  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
IF = 30A  
1.25  
2.0  
1.6  
VF  
Forward Voltage  
IF = 60A  
Volts  
IF = 30A, TJ = 125°C  
VR = 600V  
1.25  
25  
IRM  
CT  
Maximum Reverse Leakage Current  
Junction Capacitance, VR = 200V  
μA  
VR = 600V, TJ = 125°C  
250  
31  
pF  
Microsemi Website - http://www.microsemi.com  

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