Datasheet > APT30DF100HJ-Module

APT30DF100HJ-Module

更新时间： 2024-11-25 14:53:51

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
5页	300K
描述
FRED Si diode Ultra fast recovery timesSoft recovery characteristicsHigh blocking voltageHigh curr

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APT30DF100HJ-Module 数据手册

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APT30DF100HJ

ISOTOP^®Fast Diode

Full Bridge Power Module

V_RRM= 1000V

I_C= 30A @ Tc = 80°C

Application



Switch mode power supplies rectifier

Induction heating

Welding equipment

High speed rectifiers

Features



Ultra fast recovery times

Soft recovery characteristics

High blocking voltage

High current

Low leakage current

Very low stray inductance

High level of integration

ISOTOP^®Package (SOT-227)

Benefits



Outstanding performance at high frequency operation

Low losses

Low noise switching

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

RoHS Compliant

Absolute maximum ratings

Symbol

V_R

Parameter

Maximum DC reverse Voltage

Max ratings

Unit

1000

V_RRM

Maximum Peak Repetitive Reverse Voltage

T_C= 25°C

Maximum Average Forward

Current

I_F(AV)

I_FSM

Duty cycle = 50%

T_C= 80°C

T_J= 45°C

Non-Repetitive Forward Surge Current

8.3ms

210

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 - 5

www.microsemi.com

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