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APT12040JVR

更新时间： 2024-01-11 23:43:42

品牌	Logo	应用领域
ADPOW		晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数	文件大小	规格书
4页	209K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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技术参数
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APT12040JVR 技术参数

生命周期：	Obsolete	零件包装代码：	ISOTOP
包装说明：	,	针数：	4
Reach Compliance Code：	compliant	风险等级：	5.62
最大漏极电流 (Abs) (ID)：	26 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
元件数量：	1	最高工作温度：	150 °C
最大功率耗散 (Abs)：	700 W	子类别：	FET General Purpose Power
Base Number Matches：	1

APT12040JVR 数据手册

APT12040JVR

1200V 26A 0.400W

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

SOT-227

"UL Recognized"

ISOTOP^®

Faster Switching

Lower Leakage

100% Avalanche Tested

Popular SOT-227 Package

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

APT12040JVR

UNIT

Symbol Parameter

V_DSS

I_D

Drain-Source Voltage

1200

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

104

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

700

P_D

5.6

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3600

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.400

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 5792 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 479761

Chemin de Magret

12 3 4

中文翻译

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与APT12040JVR相关器件

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APT12045L2VR	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
APT1204R7BFLL	ADPOW	获取价格	POWER MOS 7 FREDFET
APT1204R7BFLL	MICROSEMI	获取价格	POWER MOS 7 FREDFET
APT1204R7BFLLE3	MICROSEMI	获取价格	Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Me
APT1204R7BFLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Me

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