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APT12060B2VFR

更新时间： 2024-09-25 08:33:15

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	121K
描述
POWER MOS V

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APT12060B2VFR 数据手册

APT12060B2VFR

APT12060LVFR

1200V 20A 0.600Ω

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

TO-264

• Faster Switching

• Lower Leakage

• Avalanche Energy Rated

FREDFET

• Popular T-MAX™ or TO-264

Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT12060B2VFR_LVFR UNIT

V_DSS

I_D

Drain-Source Voltage

1200

Volts

Continuous Drain Current @ T_C= 25°C

Amps

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

Volts

±40

Watts

W/°C

625

P_D

5.00

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

1200

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 10A)

0.600

250

Zero Gate Voltage Drain Current (V_DS= 1200, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 960V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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