Datasheet > APG2C1-395

APG2C1-395

更新时间： 2024-11-07 12:53:35

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
4页	324K
描述
Structure: InGaN Peak Wavelength: 395 nm Optical Output Power: typ. 55 mWLife Time: > 10.000 hours

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APG2C1-395 数据手册

APG2C1-395

High Power Single Chip LED

APG2C1-395 is a InGaN based, high power 385 nm single chip LED in standard emitter package for general

application.

Specifications

•

Structure: InGaN

Peak Wavelength: 395 nm

Optical Output Power: typ. 55 mW

Life Time: > 10.000 hours

Lead free product - RoHS compliant

Absolute Maximum Ratings (T_a=25°C)

Parameter

Power Dissipation, DC

Forward Current, DC

Pulsed Current (1% duty cycle, 1kHz)

Reverse Voltage

Symbol

P_D

Value

1000

500

1000

-5

Unit

I_F

I_FP

U_R

Operating Temperature

Storage Temperature

Soldering Temperature (max. 1,5 s)

T_opr

T_stg

T_sol

-30 … +70

-30 … +85

330

°C

Electro-Optical Characteristics (T_a=25°C)

Parameter

Forward Current

Viewing Angle

CW Output Power

Peak Wavelength

Forward Voltage

Half Width (FWHM)

Symbol

Condition

Min.

Typ.

350

± 75

395

3.7

Max.

Unit

I_F

P_O

λ_P

U_F

Δλ

deg.

I_F= 350 mA

Wavelength measurements tolerance is +/- 2%

Output power measurement tolerance is +/- 10%

Voltage measurement tolerance is +/- 2%

Device Materials

Item

Foundation

Lens

Electrodes

Heat Sink

Material

Plastic

Silicone resin

AgCu

13.08.2012

APG2C1-395

1 / 4

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