APG2C1-490
High Power Single Chip LED
APG2C1-490 is a InGaN based, high power 490 nm single chip LED in standard emitter package for general
application.
Specifications
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Structure: InGaN
Peak Wavelength: 490 nm
Optical Output Power: typ. 130 mW
Life Time: > 10.000 hours
Lead free product - RoHS compliant
Absolute Maximum Ratings (Ta=25°C)
Parameter
Power Dissipation, DC
Forward Current, DC
Pulsed Current (1% duty cycle, 1kHz)
Reverse Voltage
Symbol
PD
Value
1000
500
1000
-5
Unit
mW
mA
mA
V
IF
IFP
UR
Operating Temperature
Storage Temperature
Soldering Temperature (max. 1,5 s)
Topr
Tstg
Tsol
-30 … +70
-30 … +85
330
°C
°C
°C
Electro-Optical Characteristics (Ta=25°C)
Parameter
Forward Current
Viewing Angle
CW Output Power
Peak Wavelength
Forward Voltage
Half Width (FWHM)
Symbol
Condition
Min.
Typ.
350
± 75
130
490
3.3
Max.
Unit
IF
φ
PO
λP
UF
Δλ
-
-
-
-
-
-
-
-
-
-
-
-
mA
deg.
mW
nm
V
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
35
nm
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Device Materials
Item
Foundation
Lens
Electrodes
Heat Sink
Material
Plastic
Silicone resin
AgCu
AgCu
13.08.2012
APG2C1-490
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