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AP40T03GH PDF预览

AP40T03GH

更新时间: 2024-11-07 03:19:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 62K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP40T03GH 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.61外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):28 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):95 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP40T03GH 数据手册

 浏览型号AP40T03GH的Datasheet PDF文件第2页浏览型号AP40T03GH的Datasheet PDF文件第3页浏览型号AP40T03GH的Datasheet PDF文件第4页 
AP40T03GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
25mΩ  
28A  
Low Gate Charge  
Fast Switching  
G
RoHS Compliant  
Description  
G
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
D
TO-252(H)  
TO-251(J)  
S
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP40T03GJ) are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±25  
V
Continuous Drain Current, VGS @ 10V  
ID@TA=25℃  
ID@TA=100℃  
IDM  
28  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
24  
A
95  
A
PD@TA=25℃  
Total Power Dissipation  
31.25  
0.25  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200331052-1/4  

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