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AP40T03GH_08 PDF预览

AP40T03GH_08

更新时间: 2024-11-18 06:37:19
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 213K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP40T03GH_08 数据手册

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AP40T03GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
25mΩ  
28A  
Low Gate Charge  
Fast Switching  
G
Description  
G
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
D
TO-252(H)  
TO-251(J)  
S
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP40T03GJ)  
are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
28  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
24  
A
95  
A
PD@TC=25℃  
Total Power Dissipation  
31.25  
0.25  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
200807183  

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