5秒后页面跳转
AP40T03GP PDF预览

AP40T03GP

更新时间: 2024-09-25 08:31:55
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 63K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP40T03GP 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.64
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):28 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):95 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP40T03GP 数据手册

 浏览型号AP40T03GP的Datasheet PDF文件第2页浏览型号AP40T03GP的Datasheet PDF文件第3页浏览型号AP40T03GP的Datasheet PDF文件第4页 
AP40T03GS/P  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
25mΩ  
28A  
Low Gate Charge  
Fast Switching  
G
RoHS Compliant  
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP40T03GP)areavailableforlow-profileapplications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±25  
28  
V
Continuous Drain Current, VGS @ 10V  
ID@TA=25℃  
ID@TA=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
24  
A
95  
A
PD@TA=25℃  
Total Power Dissipation  
31.25  
0.25  
W
Linear Derating Factor  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
4.0  
62  
Rthj-a  
Data and specifications subject to change without notice  
200331053-1/4  

与AP40T03GP相关器件

型号 品牌 获取价格 描述 数据表
AP40T03GP-HF A-POWER

获取价格

TRANSISTOR POWER, FET, FET General Purpose Power
AP40T03GS A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GS-HF A-POWER

获取价格

TRANSISTOR POWER, FET, FET General Purpose Power
AP40T03H A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03J A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03P A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE
AP40T03S A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE
AP40T10GH A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T10GH-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T10GI A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET