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AP2322GN-HF PDF预览

AP2322GN-HF

更新时间: 2024-10-04 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极晶体管栅极驱动
页数 文件大小 规格书
4页 96K
描述
Capable of 1.8V gate drive, Simple Drive Requirement

AP2322GN-HF 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:NBase Number Matches:1

AP2322GN-HF 数据手册

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AP2322GN-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Capable of 1.8V gate drive  
BVDSS  
RDS(ON)  
ID  
20V  
90mΩ  
2.5A  
D
Simple Drive Requirement  
Surface mount package  
S
RoHS Compliant & Halogen-Free  
SOT-23  
G
D
Description  
Advanced Power MOSFETs utilized advanced processing techniques to  
achieve the lowest possible on-resistance, extremely efficient and  
cost-effectiveness device.  
G
S
The SOT-23 package is widely used for commercial-industrial applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current3, VGS @ 4.5V  
Continuous Drain Current3, VGS @ 4.5V  
Pulsed Drain Current1  
+8  
V
ID@TA=25  
ID@TA=70℃  
IDM  
2.5  
A
2.0  
A
10  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
0.833  
-55 to 150  
-55 to 150  
W
Storage Temperature Range  
Operating Junction Temperature Range  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
150  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201009173  

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