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AP2342GK-HF PDF预览

AP2342GK-HF

更新时间: 2024-02-05 08:02:00
品牌 Logo 应用领域
富鼎先进 - A-POWER 栅极开关驱动
页数 文件大小 规格书
4页 66K
描述
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic

AP2342GK-HF 数据手册

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AP2342GK-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
2Ω  
D
Lower Gate Charge  
S
Fast Switching Characteristic  
590mA  
D
RoHS Compliant & Halogen-Free  
SOT-223  
G
D
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, ultra low  
on-resistance and cost-effectiveness.  
G
S
The SOT-223 package is designed for suface mount application, larger  
heatsink than SO-8 and SOT package.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
590  
mA  
mA  
A
470  
1.6  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
1.38  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
90  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201111251  

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