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AP2332GEN-HF

更新时间： 2024-01-02 12:36:12

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	56K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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AP2332GEN-HF 数据手册

AP2332GEN-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

600V

72Ω

▼ Small Package Outline

▼ Surface Mount Device

51mA

▼ Halogen Free & RoHS Compliant Product

SOT-23

Description

Advanced Power MOSFETs utilized advanced processing

techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The special design SOT-23 package with good thermal performance

is widely preferred for all commercial-industrial surface mount

applications using infrared reflow technique and suited for voltage

conversion or switch applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+32

Continuous Drain Current³, V_GS@ 10V

Continuous Drain Current⁴, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

300

P_D@T_A=25℃

T_STG

Total Power Dissipation

0.5

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

T_J

℃

Thermal Data

Symbol

Parameter

Value

250

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201212131

12 3 4

中文翻译

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