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AP2302GN-HF PDF预览

AP2302GN-HF

更新时间: 2024-02-05 13:38:25
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TYSEMI /
页数 文件大小 规格书
2页 172K
描述
Advanced Power MOSFETs

AP2302GN-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.65配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏源导通电阻:0.064 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2302GN-HF 数据手册

 浏览型号AP2302GN-HF的Datasheet PDF文件第1页 
Product specification  
AP2302GN-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
20  
-
-
0.1  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=3.6A  
VGS=2.5V, ID=3.1A  
V/℃  
m  
RDS(ON)  
-
85  
-
0.5  
-
-
-
115  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=3.6A  
VDS=20V, VGS=0V  
1.2  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=70oC) V =20V ,V =0V  
6
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
-
1
-
-
10  
j
DS  
GS  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+12V, VDS=0V  
ID=3.6A  
-
-
+100  
Qg  
-
4.4  
0.6  
1.9  
5.2  
37  
15  
5.7  
145  
100  
50  
5.3  
-
-
-
-
-
-
-
-
-
-
8
Qgs  
Qgd  
td(on)  
tr  
VDS=10V  
-
VGS=4.5V  
VDS=10V  
-
-
ID=3.6A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=6Ω,VGS=5V  
RD=2.8Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
-
VDS=10V  
-
f=1.0MHz  
f=1.0MHz  
-
-
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
A
A
V
IS  
Continuous Source Current ( Body Diode )  
Pulsed Source Current ( Body Diode )1  
Forward On Voltage2  
VD=VG=0V , VS=1.2V  
-
-
-
-
-
-
1
ISM  
VSD  
10  
1.2  
IS=1.6A, VGS=0V  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
2 of 2  

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