Datasheet > AOW2918

AOW2918

更新时间： 2024-11-14 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	259K
描述
100V N-Channel MOSFET

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AOW2918 数据手册

AOW2918

100V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOW2918 uses Trench MOSFET technology that

is uniquely optimized to provide the most efficient high

frequency switching performance. Power losses are

minimized due to an extremely low combination of

100V

90A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 7mΩ

R_DS(ON)and C_rss.In addition, switching behavior is well

controlled with a soft recovery body diode.This device is

ideal for boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

100% UIS Tested

100% R_gTested

TO-262

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

260

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

267

P_D

133

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.33

-55 to 175

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.45

0.56

Rev 0 : Aug 2011

Page 1 of 6

12 3 4 5 6

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