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AOW298

更新时间: 2024-11-14 12:24:59
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 256K
描述
100V N-Channel MOSFET

AOW298 数据手册

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AOW298  
100V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOW298 uses Trench MOSFET technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Power losses are  
minimized due to an extremely low combination of RDS(ON)  
and Crss. In addition, switching behavior is well controlled  
with a soft recovery body diode.This device is ideal for  
boost converters and synchronous rectifiers for consumer,  
telecom, industrial power supplies and LED backlighting.  
100V  
58A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 14.5m  
100% UIS Tested  
100% Rg Tested  
TO-262  
D
Bottom View  
Top View  
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
100  
V
Gate-Source Voltage  
VGS  
ID  
IDM  
IDSM  
±20  
V
A
TC=25°C  
58  
41  
Continuous Drain  
Current  
Pulsed Drain Current C  
TC=100°C  
130  
9
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
A
7
Avalanche Current C  
IAS, IAR  
20  
A
Avalanche energy L=0.1mH C  
EAS, EAR  
20  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
100  
50  
PD  
W
TA=25°C  
2.1  
PDSM  
W
°C  
Power Dissipation A  
1.33  
-55 to 175  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
12  
Max  
15  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
50  
60  
RθJC  
1.2  
1.5  
Rev 0 : Oct. 2011  
www.aosmd.com  
Page 1 of 6  

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