Datasheet > AM8205E6R

AM8205E6R

更新时间： 2024-11-06 01:05:43

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
11页	521K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AM8205E6R 数据手册

AM8205

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

AM8205 is the Dual N-Channel enhancement mode

power field effect transistors are using trench DMOS

technology. This advanced trench technology to

provide excellent R_DS(ON). These devices are well

suited for high efficiency fast switching applications,

low in-line power loss are needed in small outline

surface mount package.



TSSOP8

V_DS= 20V, I_D= 6.2A

_DS(ON)=21mΩ(Typ.)@ V_GS= 4.5V

_DS(ON)=22mΩ(Typ.)@ V_GS= 4.0V

_DS(ON)=23mΩ(Typ.)@V_GS= 3.2V

_DS(ON)=25mΩ(Typ.)@V_GS= 2.5V



SOT-26

_DS= 20V, I_D= 6A

AM8205 is available in a TSSOP8 and SOT-26

packages.

_DS(ON)=22mΩ(Typ.)@V_GS= 4.5V

_DS(ON)=25mΩ(Typ.)@V_GS= 2.5V



Fast switch

High power and current handling capability

Exceptional on-resistance

Available in a TSSOP8 and SOT-26 packages.

ORDERING INFORMATION

APPLICATION



Power Management in Notebook Computer

Portable Equipment and Battery Powered.

Package Type

Part Number

AM8205TMX8R

TSSOP8

TMX8

PIN DESCRIPTION

SPQ: 3,000pcs/Reel

AM8205TMX8VR

AM8205E6R

SOT-26

SPQ: 3,000pcs/Reel

AM8205E6VR

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

REV3.0

- JUN 2010 RELEASED, MAY 2018 UPDATED -

- 1 -

12 3 4 5 6 7...11

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