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AM82223-010 PDF预览

AM82223-010

更新时间: 2024-11-04 22:35:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波射频双极晶体管遥测放大器局域网
页数 文件大小 规格书
3页 62K
描述
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS

AM82223-010 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
外壳连接:BASE最大集电极电流 (IC):1.2 A
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:S BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):28 W
最小功率增益 (Gp):6.5 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

AM82223-010 数据手册

 浏览型号AM82223-010的Datasheet PDF文件第2页浏览型号AM82223-010的Datasheet PDF文件第3页 
AM82223-010  
RF & MICROWAVE TRANSISTORS  
TELEMETRY APPLICATIONS  
.
.
.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
:1 VSWR CAPABILITY AT RATED  
CONDITIONS  
.
.
.
.
.
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
.400 x .400 2NLFL (S042)  
METAL/CERAMIC HERMETIC PACKAGE  
hermetically sealed  
POUT  
9 W MIN. WITH 6.5 dB GAIN  
=
ORDER CODE  
BRANDING  
82223-10  
AM82223-010  
DESCRIPTION  
PIN CONNECTION  
The AM82223-010 is a common base, silicon  
NPN bipolar transistor designed for high gain  
and efficiency in the 2.2 2.3 GHz frequency  
range.  
Suitable for hi-rel aerospace telemetry applica-  
tions, the AM82223-010 is provided in the indus-  
try-standard AMPAC™ metal/ceramic hermetic  
package and incorporates internal input and out-  
put impedance matching structures along with a  
rugged, emitter-site ballasted overlay die geome-  
try.  
AM82223-010 is capable of withstanding :1  
load mismatch at any phase angle under full  
rated operating conditions.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
28  
Unit  
Power Dissipation*  
Device Current*  
(TC 75˚C)  
W
A
1.2  
VCC  
TJ  
Collector-Supply Voltage*  
Junction Temperature  
Storage Temperature  
26  
V
°
200  
C
C
°
TSTG  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance  
4.4  
*Applies only to rated RF amplifier operation  
NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot  
Junction Temperature at rated RF operating conditions.  
1/3  
August 31, 1994  

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