Datasheet > AM8204E6VR

AM8204E6VR

更新时间： 2024-11-24 01:12:55

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
9页	673K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AM8204E6VR 数据手册

AM8204

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM8204 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications .It is ESD protested.



V_DS= 20V, I_D= 6A

Typ.R_DS(ON)= 17mΩ @ V_GS= 4.5V

Typ.R_DS(ON)= 22mΩ @ V_GS= 2.5V

ESD Rating: 2000V HBM



High Power and current handing capability

Lead free product is acquired

Surface Mount Package

AM8204 is available in a SOT-26 package.

Available in a SOT-26 package.

ORDERING INFORMATION

APPLICATION



PWM application

Load switch

Package Type

SOT-26

Part Number

AM8204E6R

AM8204E6VR

PIN DESCRIPTION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Suffix ꢀ V ꢀ means Halogen free Package

Schematic diagram

REV1.0

- JUN 2015 RELEASED -

- 1 -

12 3 4 5 6 7...9

中文翻译

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