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AM81214-015 PDF预览

AM81214-015

更新时间: 2024-11-17 22:05:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波射频双极晶体管雷达放大器局域网
页数 文件大小 规格书
4页 66K
描述
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM81214-015 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.32Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):1.8 A配置:SINGLE
最小直流电流增益 (hFE):30最高频带:L BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2最高工作温度:250 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):37.5 W最小功率增益 (Gp):8.6 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AM81214-015 数据手册

 浏览型号AM81214-015的Datasheet PDF文件第2页浏览型号AM81214-015的Datasheet PDF文件第3页浏览型号AM81214-015的Datasheet PDF文件第4页 
AM81214-015  
RF & MICROWAVE TRANSISTORS  
L-BAND RADAR APPLICATIONS  
.
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
5:1 VSWR CAPABILITY  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
.310 x .310 2LFL (S064)  
METAL/CERAMIC HERMETIC PACKAGE  
hermetically sealed  
POUT  
14.5 W MIN. WITH 8.6 dB GAIN  
=
ORDER CODE  
AM 81214-015  
BRANDING  
81214-15  
PIN CONNECTION  
DESCRIPTION  
The AM81214-015 device is a high power Class C  
transistor specifically designed for L-Band Radar  
pulsed output and driver applications.  
This device is capable of operation over a wide range  
of pulse widths, duty cycles, and temperatures and  
is capable of withstanding 5:1 output VSWR at rated  
RF conditions. Low RF thermal resistance and com-  
puterized automatic wire bonding techniques ensure  
high reliability and product consistency.  
AM81214-015 is supplied in the grounded IMPAC  
Hermetic Metal/Ceramic package with internal  
input/output matching structures.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
Parameter  
Value  
Unit  
°
PDISS  
Power Dissipation* (TC 100 C)  
37.5  
W
IC  
VCC  
TJ  
Device Current*  
1.8  
32  
A
V
Collector-Supply Voltage*  
°
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
TSTG  
65 to +200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance*  
4.0  
°C/W  
*Applies only to rated RF amplifier operation  
August 1992  
1/4  

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