Datasheet > AM3400AE3VR

AM3400AE3VR

更新时间： 2024-10-31 01:14:35

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
8页	730K
描述
30V N-CHANNEL ENHANCEMENT MODE

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数据手册

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AM3400AE3VR 数据手册

AM3400A

AiT Semiconductor Inc.

MOSFET

www.ait-ic.com

30V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION

FEATURES

AM3400A is the N-Channel enhancement mode

power field effect transistors are using trench DMOS

technology. This advanced trench technology devices

are well suited for high efficiency fast switching

applications, low in-line power loss are needed in

small outline surface mount package.



V_DS= 30V, I_D= 6.2A

_DS(ON)=20mΩ(Typ.)@V_GS= 10V

_DS(ON)=23mΩ(Typ.)@V_GS= 4.5V

_DS(ON)=27mΩ(Typ.)@V_GS= 2.5V



Fast switch

Low gate drive applications

High power and current handling capability

Available in SOT-23 Package

The AM3400A is available in SOT-23 package.

APPLICATIONS

ORDERING INFORMATION



Hand-Held Instruments

Load Switch

PWM Applications

Package Type

Part Number

AM3400AE3R

AM3400AE3VR

SOT-23

TYPICAL APPLICATION

SPQ: 3,000pcs/Reel

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

REV2.0

- JUL 2010 RELEASED, MAY 2018 UPDATED -

- 1 -

12 3 4 5 6 7 8

中文翻译

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