ADVANCE INFORMATION
Am29LV128M
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only
Uniform Sector Flash Memory with Enhanced VersatileI/O Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Single power supply operation
— 3 volt read, erase, and program operations
■ Low power consumption (typical values at 3.0 V, 5
MHz)
■ Enhanced VersatileI/O control
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
— Device generates and tolerates voltages on all I/Os
and control inputs as determined by the voltage on the
VIO pin; operates from 1.65 to 3.6 V (see page 8)
■ Manufactured on 0.23 µm MirrorBit process
■ Package options
— 56-pin TSOP
technology
■ SecSi (Secured Silicon) Sector region
— 64-ball Fortified BGA
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— May be programmed and locked at the factory or by
the customer
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
■ Flexible sector architecture
— Data# polling & toggle bits provide status
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C
■ Hardware features
— Sector Protection: hardware-level method of
preventing write operations within a sector
PERFORMANCE CHARACTERISTICS
■ High performance
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
— 90 ns access time
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— 25 ns page read times
— 0.4 s typical sector erase time
— 5.9 µs typical write buffer word programming time:
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Publication# 25270 Rev: B Amendment/0
Issue Date: July 1, 2002
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Refer to AMD’s Website (www.amd.com) for the latest information.