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AM29LV128ML109PCF PDF预览

AM29LV128ML109PCF

更新时间: 2024-11-22 03:17:59
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
57页 1215K
描述
Flash, 8MX16, 100ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64

AM29LV128ML109PCF 数据手册

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ADVANCE INFORMATION  
Am29LV128M  
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with Enhanced VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
— 4-word/8-byte page read buffer  
— 16-word/32-byte write buffer  
Single power supply operation  
— 3 volt read, erase, and program operations  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
Enhanced VersatileI/O control  
— 30 mA typical active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
— Device generates and tolerates voltages on all I/Os  
and control inputs as determined by the voltage on the  
VIO pin; operates from 1.65 to 3.6 V (see page 8)  
Manufactured on 0.23 µm MirrorBit process  
Package options  
— 56-pin TSOP  
technology  
SecSi (Secured Silicon) Sector region  
— 64-ball Fortified BGA  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
SOFTWARE & HARDWARE FEATURES  
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— May be programmed and locked at the factory or by  
the customer  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
Flexible sector architecture  
— Data# polling & toggle bits provide status  
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors  
— Unlock Bypass Program command reduces overall  
multiple-word or byte programming time  
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
Minimum 100,000 erase cycle guarantee per sector  
20-year data retention at 125°C  
Hardware features  
— Sector Protection: hardware-level method of  
preventing write operations within a sector  
PERFORMANCE CHARACTERISTICS  
High performance  
Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
— 90 ns access time  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— 25 ns page read times  
— 0.4 s typical sector erase time  
— 5.9 µs typical write buffer word programming time:  
16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
Publication# 25270 Rev: B Amendment/0  
Issue Date: July 1, 2002  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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