Datasheet > AM29LV128ML109PCI

AM29LV128ML109PCI

更新时间： 2024-11-22 03:17:59

品牌	Logo	应用领域
飞索 - SPANSION		/
页数	文件大小	规格书
57页	1215K
描述
Flash, 8MX16, 100ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64

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ADVANCE INFORMATION

Am29LV128M

128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only

Uniform Sector Flash Memory with Enhanced VersatileI/O Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

— 4-word/8-byte page read buffer

— 16-word/32-byte write buffer

■ Single power supply operation

— 3 volt read, erase, and program operations

■ Low power consumption (typical values at 3.0 V, 5

MHz)

■ Enhanced VersatileI/O control

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

— Device generates and tolerates voltages on all I/Os

and control inputs as determined by the voltage on the

V_IOpin; operates from 1.65 to 3.6 V (see page 8)

■ Manufactured on 0.23 µm MirrorBit process

■ Package options

— 56-pin TSOP

technology

■ SecSi (Secured Silicon) Sector region

— 64-ball Fortified BGA

— 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— May be programmed and locked at the factory or by

the customer

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

■ Flexible sector architecture

— Data# polling & toggle bits provide status

— Two hundred fifty-six 32 Kword (64 Kbyte) sectors

— Unlock Bypass Program command reduces overall

multiple-word or byte programming time

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

■ Minimum 100,000 erase cycle guarantee per sector

■ 20-year data retention at 125°C

■ Hardware features

— Sector Protection: hardware-level method of

preventing write operations within a sector

PERFORMANCE CHARACTERISTICS

■ High performance

— Temporary Sector Unprotect: V_ID-level method of

changing code in locked sectors

— 90 ns access time

— WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings

— 25 ns page read times

— 0.4 s typical sector erase time

— 5.9 µs typical write buffer word programming time:

16-word/32-byte write buffer reduces overall

programming time for multiple-word updates

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

Publication# 25270 Rev: B Amendment/0

Issue Date: July 1, 2002

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29LV128ML109PCI相关器件

型号	品牌	获取价格	描述	数据表
AM29LV128ML10RFIN	SPANSION	获取价格	EEPROM Card, 8MX16, 100ns, Parallel, CMOS, PDSO56,
AM29LV128ML110EF	AMD	获取价格	128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110EI	AMD	获取价格	128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110FF	AMD	获取价格	128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110FI	AMD	获取价格	128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110PCF	AMD	获取价格	128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML110PCI	AMD	获取价格	128 Megabit (8 M x 16-Bit/16 M x 8-Bit) Mirro
AM29LV128ML112EF	SPANSION	获取价格	Flash, 8MX16, 110ns, PDSO56, MO-142EC, TSOP-56
AM29LV128ML112EI	SPANSION	获取价格	Flash, 8MX16, 110ns, PDSO56, MO-142EC, TSOP-56
AM29LV128ML112FF	SPANSION	获取价格	Flash, 8MX16, 110ns, PDSO56, REVERSE, MO-142EC, TSOP-56

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