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AM29LV128ML112PCF PDF预览

AM29LV128ML112PCF

更新时间: 2024-11-22 03:54:35
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
10页 273K
描述
Flash, 8MX16, 110ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-64

AM29LV128ML112PCF 数据手册

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ADVANCE INFORMATION  
Am29LV128M  
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
4-word/8-byte page read buffer  
16-word/32-byte write buffer  
Single power supply operation  
3 volt read, erase, and program operations  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
VersatileI/O control  
30 mA typical active read current  
50 mA typical erase/program current  
1 µA typical standby mode current  
Device generates and tolerates voltages on CE# and  
DQ I/O as determined by the voltage on the VIO pin;  
operates from 1.65 to 3.6 V  
Manufactured on 0.23 µm MirrorBit process  
Package options  
56-pin TSOP  
technology  
SecSi (Secured Silicon) Sector region  
64-ball Fortified BGA  
128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
SOFTWARE & HARDWARE FEATURES  
Software features  
Program Suspend & Resume: read other sectors  
before programming operation is completed  
May be programmed and locked at the factory or by  
the customer  
Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
Flexible sector architecture  
Data# polling & toggle bits provide status  
Two hundred fifty-six 32 Kword (64 Kbyte) sectors  
Unlock Bypass Program command reduces overall  
Compatibility with JEDEC standards  
multiple-word or byte programming time  
Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
Minimum 100,000 erase cycle guarantee per sector  
20-year data retention at 125°C  
Hardware features  
Sector Group Protection: hardware-level method of  
preventing write operations within a sector group  
PERFORMANCE CHARACTERISTICS  
High performance  
Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
90 ns access time  
WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
25 ns page read times  
0.4 s typical sector erase time  
5.9 µs typical write buffer word programming time:  
16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Hardware reset input (RESET#) resets device  
Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
Publication# 25270 Rev: A Amendment/+2  
Issue Date: April 26, 2002  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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