5秒后页面跳转
AM29LV081B-120ED PDF预览

AM29LV081B-120ED

更新时间: 2024-11-11 03:53:59
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
40页 972K
描述
Flash, 1MX8, 120ns, PDSO40, LEAD FREE, MO-142BCD, TSOP-40

AM29LV081B-120ED 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:LEAD FREE, MO-142BCD, TSOP-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.75
最长访问时间:120 ns命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e3长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1部门数/规模:16
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:10 mmBase Number Matches:1

AM29LV081B-120ED 数据手册

 浏览型号AM29LV081B-120ED的Datasheet PDF文件第2页浏览型号AM29LV081B-120ED的Datasheet PDF文件第3页浏览型号AM29LV081B-120ED的Datasheet PDF文件第4页浏览型号AM29LV081B-120ED的Datasheet PDF文件第5页浏览型号AM29LV081B-120ED的Datasheet PDF文件第6页浏览型号AM29LV081B-120ED的Datasheet PDF文件第7页 
Am29LV081B  
Data Sheet (Retired Product)  
Am29LV081B Cover Sheet  
This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes  
Am29LV081B. This is the factory-recommended migration path. Please refer to the S29AL008J data sheet for specifications  
and ordering information. Availability of this document is retained for reference and historical purposes only.  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been  
made are the result of normal data sheet improvement and are noted in the document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 21525  
Revision D  
Amendment 7  
Issue Date February 24, 2009  

与AM29LV081B-120ED相关器件

型号 品牌 获取价格 描述 数据表
AM29LV081B120EE AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-120EE AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-120EEB AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B120EF AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-120EF SPANSION

获取价格

Flash, 1MX8, 120ns, PDSO40, LEAD FREE, MO-142BCD, TSOP-40
AM29LV081B120EI AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-120EI AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-120EIB AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B120EK AMD

获取价格

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-120EK SPANSION

获取价格

Flash, 1MX8, 120ns, PDSO40, LEAD FREE, MO-142BCD, TSOP-40