Datasheet > AM29LV081-90RFEB

AM29LV081-90RFEB

更新时间： 2024-11-07 23:04:19

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
35页	414K
描述
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

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AM29LV081-90RFEB 数据手册

PRELIMINARY

Am29LV081

8 Megabit (1 M x 8-Bit)

CMOS 3.0 Volt-only Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Optimized architecture for Miniature Card and

■ Embedded Algorithms

mass storage applications

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Typical 1,000,000 write cycles per sector

(100,000 cycles minimum guaranteed)

■ High performance

■ Package option

— Full voltage range: access times as fast as 100

— 40-pin TSOP

■ Compatibility with JEDEC standards

— Regulated voltage range: access times as fast

as 90 ns

— Pinout and software compatible with single-

power supply Flash

■ Ultra low power consumption (typical values at

— Superior inadvertent write protection

5 MHz)

■ Data# Polling and toggle bits

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 10 mA read current

— Provides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— 20 mA program/erase current

— Provides a hardware method of detecting

program or erase cycle completion

■ Flexible sector architecture

— Sixteen 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

A hardware method of locking a sector (using

programming equipment) to prevent any

program or erase operations within that sector

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

Publication# 20977 Rev: C Amendment/+1

Issue Date: March 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7...35

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与AM29LV081-90RFEB相关器件

型号	品牌	获取价格	描述	数据表
AM29LV081-90RFI	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081-90RFIB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B_06	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-120EC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-120ECB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B120ED	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-120ED	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO40, LEAD FREE, MO-142BCD, TSOP-40
AM29LV081B120EE	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

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