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AM29LV065DU101REFB PDF预览

AM29LV065DU101REFB

更新时间： 2024-11-08 14:40:51
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
50页 979K
描述
Flash, 8MX8, 100ns, PDSO48, MO-142DD, TSOP-48

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AM29LV065DU101REFB 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：MO-142DD, TSOP-48
针数：48Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.4Is Samacsys：N
最长访问时间：100 ns启动块：BOTTOM/TOP
JESD-30 代码：R-PDSO-G48JESD-609代码：e3
长度：18.4 mm内存密度：67108864 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：48字数：8388608 words
字数代码：8000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AM29LV065DU101REFB 数据手册

 浏览型号AM29LV065DU101REFB的Datasheet PDF文件第2页浏览型号AM29LV065DU101REFB的Datasheet PDF文件第3页浏览型号AM29LV065DU101REFB的Datasheet PDF文件第4页浏览型号AM29LV065DU101REFB的Datasheet PDF文件第5页浏览型号AM29LV065DU101REFB的Datasheet PDF文件第6页浏览型号AM29LV065DU101REFB的Datasheet PDF文件第7页 
PRELIMINARY  
Am29LV065D  
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only  
Uniform Sector Flash Memory with VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
■ Single power supply operation  
■ Compatibility with JEDEC standards  
— 3.0 to 3.6 volt read, erase, and program operations  
— Pinout and software compatible with single-power  
supply Flash  
■ VersatileI/O control  
— Superior inadvertent write protection  
— Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin  
■ Minimum 1 million erase cycle guarantee per sector  
■ Package options  
— 48-pin TSOP  
■ High performance  
— Access times as fast as 90 ns  
— 63-ball FBGA  
■ Manufactured on 0.23 µm process technology  
■ CFI (Common Flash Interface) compliant  
■ Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from, or  
program data to, a sector that is not being erased,  
then resumes the erase operation  
— Provides device-specific information to the system,  
allowing host software to easily reconfigure for  
different Flash devices  
■ Data# Polling and toggle bits  
— Provides a software method of detecting program or  
erase operation completion  
■ SecSi (Secured Silicon) Sector region  
— 256-byte sector for permanent, secure identification  
through an 16-byte random Electronic Serial Number  
■ Unlock Bypass Program command  
— May be programmed and locked at the factory or by  
the customer  
— Reduces overall programming time when issuing  
multiple program command sequences  
— Accessible through a command sequence  
■ Ready/Busy# pin (RY/BY#)  
■ Ultra low power consumption (typical values at 3.0 V,  
— Provides a hardware method of detecting program or  
erase cycle completion  
5 MHz)  
— 9 mA typical active read current  
— 26 mA typical erase/program current  
— 200 nA typical standby mode current  
■ Hardware reset pin (RESET#)  
— Hardware method to reset the device for reading array  
data  
■ Flexible sector architecture  
■ ACC pin  
— One hundred twenty-eight 64 Kbyte sectors  
— Accelerates programming time for higher throughput  
during system production  
■ Sector Protection  
— A hardware method to lock a sector to prevent  
program or erase operations within that sector  
■ Program and Erase Performance (VHH not applied to  
the ACC input pin)  
— Sectors can be locked in-system or via programming  
equipment  
— Byte program time: 5 µs typical  
— Sector erase time: 1.6 s typical for each 64 Kbyte  
sector  
— Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
■ 20-year data retention at 125°C  
■ Embedded Algorithms  
— Reliable operation for the life of the system  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Embedded Program algorithm automatically writes  
and verifies data at specified addresses  
Publication# 23544  
Issue Date: October 19, 2000  
Rev: A Amendment/+4  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  
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与AM29LV065DU101REFB相关器件

型号 品牌 获取价格 描述 数据表
AM29LV065DU101REFN SPANSION

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 		Flash, 8MX8, 100ns, PDSO48, MO-142DD, TSOP-48
AM29LV065DU101REI AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM
AM29LV065DU101REI SPANSION

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 		Flash, 8MX8, 100ns, PDSO48, MO-142DD, TSOP-48
AM29LV065DU101REIB SPANSION

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 		Flash, 8MX8, 100ns, PDSO48, MO-142DD, TSOP-48
AM29LV065DU101REIN AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM
AM29LV065DU101RFE AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM
AM29LV065DU101RFEN AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM
AM29LV065DU101RFI AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM
AM29LV065DU101RFIN AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM
AM29LV065DU101RWHE AMD

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 		64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM

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