Am29LV040B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Unlock Bypass Program Command
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Reduces overall programming time when issuing
multiple program command sequences
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■ Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
■ Manufactured on 0.32 µm process technology
■ High performance
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
55 ns
■ Minimum 1,000,000 write/erase cycles
guaranteed
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
■ Ultra low power consumption (typical values at
5 MHz)
— Automatic sleep mode: 1 µA
— Standby mode: 1 µA
— 32-pin PLCC
— Read mode: 7 mA
— 32-pin TSOP
— Program/erase mode: 15 mA
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
■ Flexible sector architecture
— Eight 64 Kbyte sectors
— Superior inadvertent write protection
— Any combination of sectors can be erased;
supports full chip erase
■ Data# Polling and toggle bits
— Sector Protection features:
— Provides a software method of detecting program
or erase cycle completion
Hardware method of locking a sector to prevent
any program or erase operations within that sector
■ Erase Suspend/Resume
Sectors can be locked via programming
equipment
— Supports reading data from or programming data
to a sector not being erased
Publication# 21354 Rev: C Amendment/+2
Issue Date: July 20, 1999