Datasheet > AM29LV004T-100EC

AM29LV004T-100EC

更新时间： 2024-11-07 22:06:35

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
36页	428K
描述
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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AM29LV004T-100EC 数据手册

PRELIMINARY

Am29LV004

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Top or bottom boot block configurations

available

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

■ Embedded Algorithms

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 100

■ Typical 1,000,000 write cycles per sector

— Regulated voltage range: access times as fast

as 90 ns

(100,000 cycles minimum guaranteed)

■ Package option

■ Ultra low power consumption (typical values at

— 40-pin TSOP

5 MHz)

■ Compatibility with JEDEC standards

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 10 mA read current

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

— 20 mA program/erase current

■ Data# Polling and toggle bits

■ Flexible sector architecture

— Provides a software method of detecting

program or erase operation completion

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors

■ Ready/Busy# pin (RY/BY#)

— Supports full chip erase

— Provides a hardware method of detecting

program or erase cycle completion

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Sectors can be locked via programming

equipment

■ Hardware reset pin (RESET#)

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

— Hardware method to reset the device to reading

array data

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 20510 Rev: D Amendment/+1

Issue Date: March 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7...36

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与AM29LV004T-100EC相关器件

型号	品牌	获取价格	描述	数据表
AM29LV004T-100ECB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100EE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100EEB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100EEB	SPANSION	获取价格	Flash, 512KX8, 100ns, PDSO40, TSOP-40
AM29LV004T-100EF	SPANSION	获取价格	Flash, 512KX8, 100ns, PDSO40, TSOP-40
AM29LV004T-100EI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100EIB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100FC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100FCB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004T-100FD	SPANSION	获取价格	Flash, 512KX8, 100ns, PDSO40, REVERSE, TSOP-40

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