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AM29LV004BT-80FI PDF预览

AM29LV004BT-80FI

更新时间： 2024-11-08 05:26:39
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
6页 42K
描述
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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中文翻译

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AM29LV004BT-80FI 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：TSOP包装说明：REVERSE, TSOP-40
针数：40Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.29Is Samacsys：N
最长访问时间：80 ns启动块：TOP
命令用户界面：YES数据轮询：YES
耐久性：1000000 Write/Erase CyclesJESD-30 代码：R-PDSO-G40
JESD-609代码：e0长度：18.4 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：1,2,1,7端子数量：40
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1-R
封装等效代码：TSSOP40,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
反向引出线：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
宽度：10 mmBase Number Matches：1

AM29LV004BT-80FI 数据手册

 浏览型号AM29LV004BT-80FI的Datasheet PDF文件第2页浏览型号AM29LV004BT-80FI的Datasheet PDF文件第3页浏览型号AM29LV004BT-80FI的Datasheet PDF文件第4页浏览型号AM29LV004BT-80FI的Datasheet PDF文件第5页浏览型号AM29LV004BT-80FI的Datasheet PDF文件第6页 
ADVANCE INFORMATION  
Am29LV004B  
4 Megabit (512 K x 8-Bit)  
CMOS 3.0 Volt-only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ Single power supply operation  
■ Unlock Bypass Program Command  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Reduces overall programming time when  
issuing multiple program command sequences  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
■ Top or bottom boot block configurations  
available  
■ Embedded Algorithms  
■ Manufactured on 0.35 µm process technology  
— Compatible with 0.5 µm Am29LV004 device  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
■ High performance  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
— Full voltage range: access times as fast as 80 ns  
— Regulated voltage range: access times as fast  
as 70 ns  
■ Minimum 1,000,000 write cycle guarantee per  
sector  
■ Ultra low power consumption (typical values at  
■ Package option  
5 MHz)  
— 40-pin TSOP  
— 200 nA Automatic Sleep mode current  
— 200 nA standby mode current  
— 7 mA read current  
■ Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
— 15 mA program/erase current  
— Superior inadvertent write protection  
■ Flexible sector architecture  
■ Data# Polling and toggle bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
seven 64 Kbyte sectors  
— Provides a software method of detecting  
program or erase operation completion  
— Supports full chip erase  
— Sector Protection features:  
■ Ready/Busy# pin (RY/BY#)  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
— Provides a hardware method of detecting  
program or erase cycle completion  
■ Erase Suspend/Erase Resume  
Sectors can be locked in-system or via  
programming equipment  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
■ Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Publication# 21522 Rev: A Amendment/0  
Issue Date: January 1998  
Refer to AMD’s Website (www.amd.com) for the latest information.  
123456

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与AM29LV004BT-80FI相关器件

型号 品牌 获取价格 描述 数据表
AM29LV004BT-80FIB AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-80FK SPANSION

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 		Flash, 512KX8, 80ns, PDSO40, REVERSE, TSOP-40
AM29LV004BT-90EC AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-90EC SPANSION

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 		Flash, 512KX8, 90ns, PDSO40, MO-142CD, TSOP-40
AM29LV004BT-90ECB AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-90ED AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-90EE SPANSION

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 		Flash, 512KX8, 90ns, PDSO40, MO-142CD, TSOP-40
AM29LV004BT-90EE AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-90EEB AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-90EF AMD

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 		4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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