Datasheet > AM29LV004BT-70RFEB

AM29LV004BT-70RFEB

更新时间： 2024-11-07 22:24:07

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
6页	42K
描述
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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ADVANCE INFORMATION

Am29LV004B

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when

issuing multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29LV004 device

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast

as 70 ns

■ Minimum 1,000,000 write cycle guarantee per

sector

■ Ultra low power consumption (typical values at

■ Package option

5 MHz)

— 40-pin TSOP

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— 15 mA program/erase current

— Superior inadvertent write protection

■ Flexible sector architecture

■ Data# Polling and toggle bits

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

Sectors can be locked in-system or via

programming equipment

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21522 Rev: A Amendment/0

Issue Date: January 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6

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与AM29LV004BT-70RFEB相关器件

型号	品牌	获取价格	描述	数据表
AM29LV004BT-70RFF	SPANSION	获取价格	Flash, 512KX8, 70ns, PDSO40, REVERSE, TSOP-40
AM29LV004BT-70RFI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-70RFIB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-80EC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-80ECB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-80ED	SPANSION	获取价格	Flash, 512KX8, 80ns, PDSO40, TSOP-40
AM29LV004BT-80EE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-80EEB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-80EF	SPANSION	获取价格	Flash, 512KX8, 80ns, PDSO40, TSOP-40
AM29LV004BT-80EI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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