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AM29F800BT-90DWE1 PDF预览

AM29F800BT-90DWE1

更新时间: 2024-11-04 05:29:19
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
9页 203K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1

AM29F800BT-90DWE1 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.26最长访问时间:90 ns
其他特性:USER CONFG AS 512K X 16; TOP BOOT BLOCK启动块:TOP
JESD-30 代码:X-XUUC-N44内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1MX8
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:NO LEAD
端子位置:UPPER类型:NOR TYPE
Base Number Matches:1

AM29F800BT-90DWE1 数据手册

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SUPPLEMENT  
Am29F800B Known Good Die  
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Top or bottom boot block configurations  
available  
— 5.0 Volt-only operation for read, erase, and  
program operations  
Embedded Algorithms  
— Minimizes system level requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.35 µm process technology  
— Compatible with 0.5 µm Am29F800 device  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
High performance  
— 90 or 120 ns access time  
Minimum 1,000,000 write cycles per sector  
Low power consumption (typical values at 5  
guaranteed  
MHz)  
Compatibility with JEDEC standards  
— 1 µA standby mode current  
— Pinout and software compatible with single-  
power-supply Flash  
— 20 mA read current (byte mode)  
— 28 mA read current (word mode)  
— 30 mA program/erase current  
— Superior inadvertent write protection  
Data# Polling and toggle bits  
Flexible sector architecture  
— Provides a software method of detecting  
program or erase operation completion  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
fifteen 64 Kbyte sectors (byte mode)  
Ready/Busy# pin (RY/BY#)  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
fifteen 32 Kword sectors (word mode)  
— Provides a hardware method of detecting  
program or erase cycle completion  
— Supports full chip erase  
Erase Suspend/Erase Resume  
— Sector Protection features:  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
Hardware reset pin (RESET#)  
Sectors can be locked via programming  
equipment  
— Hardware method to reset the device to reading  
array data  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
5/4/98  
Publication# 21631 Rev: A Amendment/+2  
Issue Date: April 1998  

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