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AM29F400AT-90SC PDF预览

AM29F400AT-90SC

更新时间： 2024-11-04 05:26:35
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
35页 140K
描述
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

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中文翻译

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AM29F400AT-90SC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP-44
针数：44Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.71最长访问时间：90 ns
其他特性：100K WRITE/ERASE CYCLES MIN; CONFIGURABLE AS 256K X 16备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G44JESD-609代码：e0
长度：28.2 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：1,2,1,7
端子数量：44字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP44,.63封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：2.8 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.05 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：13.3 mm

AM29F400AT-90SC 数据手册

 浏览型号AM29F400AT-90SC的Datasheet PDF文件第2页浏览型号AM29F400AT-90SC的Datasheet PDF文件第3页浏览型号AM29F400AT-90SC的Datasheet PDF文件第4页浏览型号AM29F400AT-90SC的Datasheet PDF文件第5页浏览型号AM29F400AT-90SC的Datasheet PDF文件第6页浏览型号AM29F400AT-90SC的Datasheet PDF文件第7页 
PRELIMINARY  
Am29F400AT/Am29F400AB  
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only,  
Sector Erase Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ 5.0 V ± 10% for read and write operations  
■ Embedded Program Algorithms  
— Minimizes system level power requirements  
— Automatically programs and verifies data at  
specified address  
■ Compatible with JEDEC-standards  
■ Data Polling andToggle Bit feature for detection  
— Pinout and software compatible with  
single-power-supply flash  
of program or erase cycle completion  
■ Ready/Busy output (RY/BY)  
— Superior inadvertent write protection  
— Hardware method for detection of program or  
erase cycle completion  
■ Package options  
— 44-pin SO  
■ Erase Suspend/Resume  
— 48-pin TSOP  
— Supports reading data from a sector not being  
erased  
■ Minimum 100,000 write/erase cycles guaranteed  
■ High performance  
■ Low power consumption  
— 60 ns maximum access time  
— 20 mA typical active read current for Byte Mode  
— 28 mA typical active read current for Word Mode  
— 30 mA typical program/erase current  
■ Sector erase architecture  
— One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and  
seven 64 Kbytes  
■ Enhanced power management for standby  
— Any combination of sectors can be erased. Also  
supports full chip erase.  
mode  
— 1 µA typical standby current  
■ Sector protection  
■ Boot Code Sector Architecture  
— T = Top sector  
— Hardware method that disables any combination  
of sectors from write or erase operations.  
Implemented using standard PROM  
programming equipment.  
— B = Bottom sector  
■ Hardware RESET pin  
■ Embedded Erase Algorithms  
— Resets internal state machine to the read mode  
— Automatically preprograms and erases the chip  
or any sector  
GENERAL DESCRIPTION  
The Am29F400A is a 4 Mbit, 5.0Volt-only Flash memory  
organized as 512 Kbytes of 8 bits each or 256 Kwords  
of 16 bits each. The 4 Mbits of data is divided into 11  
sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte,  
and seven 64 Kbytes, for flexible erase capability. The  
8 bits of data will appear on DQ0–DQ7 or 16 bits on  
DQ0–DQ15. The Am29F400A is offered in 44-pin SO  
and 48-pin TSOP packages. This device is designed  
to be programmed in-system with the standard system  
The standard Am29F400A offers access times of  
60 ns, 70 ns, 90 ns, 120 ns and 150 ns, allowing high  
speed microprocessors to operate without wait states.  
To eliminate bus contention the device has sepa-  
rate chip enable (CE), write enable (WE) and output  
enable (OE) controls.  
The Am29F400A is entirely command set compatible  
with the JEDEC single-power-supply Flash standard.  
Commands are written to the command register using  
standard microprocessor write timings. Register con-  
tents serve as input to an internal state-machine  
which controls the erase and programming circuitry.  
5.0 Volt V  
supply. 12.0 Volt V is not required for  
CC  
PP  
program or erase operations.The device can also be re-  
programmed in standard EPROM programmers.  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Publication# 20380 Rev: B Amendment/0  
Issue Date: April 1997  
1234567...35

中文翻译

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AM29F400AT-90SC 替代型号

型号 品牌 替代类型 描述 数据表
MX29F400TMC-90 Macronix

功能相似

 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY

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 		4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400AT-90SI AMD

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 		4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400AT-90SIB AMD

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 		4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400B AMD

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 		4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400B_00 AMD

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 		4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400B_03 AMD

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 		4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die
AM29F400B_06 AMD

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 		4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400B_09 SPANSION

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 		4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400B-1 AMD

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 		4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die
AM29F400B-120EC ETC

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 		x8/x16 Flash EEPROM

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