Datasheet > AM29F016B-70F4E

AM29F016B-70F4E

更新时间： 2024-11-01 23:04:19

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
38页	451K
描述
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29F016B-70F4E 数据手册

PRELIMINARY

Am29F016B

16 Megabit (2 M x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10%, single power supply operation

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

■ Package options

— 48-pin and 40-pin TSOP

— 44-pin SO

— Minimizes system level power requirements

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F016 device

■ High performance

■ Compatible with JEDEC standards

— Access times as fast as 70 ns

— Pinout and software compatible with

single-power-supply Flash standard

■ Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— 1 µA typical standby current (standard access

time to active mode)

— Provides a software method of detecting

program or erase cycle completion

■ Flexible sector architecture

— 32 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased

— Supports full chip erase

■ Ready/Busy# output (RY/BY#)

— Provides a hardware method for detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Group sector protection:

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

■ Hardware reset pin (RESET#)

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

— Resets internal state machine to the read mode

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

Publication# 21444 Rev: B Amendment/+2

Issue Date: April 1998

12 3 4 5 6 7...38

中文翻译

下载PDF

与AM29F016B-70F4E相关器件

型号	品牌	获取价格	描述	数据表
AM29F016B-70F4EB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70F4I	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70F4IB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70FC	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70FCB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70FE	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70FEB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70FI	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70FIB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016B-70SC	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

与AM29F016B-70F4E相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

6
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

3
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

24
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F016B-70F4E

AM29F016B-70F4E 数据手册

与AM29F016B-70F4E相关器件

与AM29F016B-70F4E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F016B-70F4E

AM29F016B-70F4E 数据手册

与AM29F016B-70F4E相关器件

与AM29F016B-70F4E相关文章

您还可以找

您在本页遇到什么问题？