Datasheet > AM29DS323DT120WHK

AM29DS323DT120WHK

更新时间： 2024-11-20 03:14:11

品牌	Logo	应用领域
飞索 - SPANSION		/
页数	文件大小	规格书
51页	931K
描述
Flash, 4MX8, 120ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48

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ADVANCE INFORMATION

Am29DS323D

32 Megabit (4 M x 8-Bit/2 M x 16-Bit)

CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Minimum 1 million write cycles guaranteed per sector

■ Simultaneous Read/Write operations

■ 20 Year data retention at 125°C

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Reliable operation for the life of the system

SOFTWARE FEATURES

— Zero latency between read and write operations

■ Data Management Software (DMS)

■ Multiple bank architectures

— AMD-supplied software manages data programming

and erasing, enabling EEPROM emulation

— Two devices available with different bank sizes (refer

to Table 3)

— Eases sector erase limitations

■ Secured Silicon (SecSi) Sector: Extra 64 KByte sector

■ Supports Common Flash Memory Interface (CFI)

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

■ Any combination of sectors can be erased

■ Package options

— 48-ball FBGA

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

— 48-pin TSOP (contact AMD for availability)

■ Top or bottom boot block

■ Hardware reset pin (RESET#)

■ Manufactured on 0.23 µm process technology

■ Compatible with JEDEC standards

— Hardware method of resetting the internal state

machine to reading array data

— Pinout and software compatible with

single-power-supply flash standard

■ WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

PERFORMANCE CHARACTERISTICS

— Acceleration (ACC) function provides accelerated

program times

■ High performance

— Access time as fast 100 ns

■ Sector protection

— Program time: 14 µs/word typical utilizing

Accelerate function

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

■ Ultra low power consumption (typical values)

— 1 mA active read current at 1 MHz

— 5 mA active read current at 5 MHz

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

— 200 nA in standby or automatic sleep mode

Publication# 23480 Rev: A Amendment/0

Issue Date: January 25, 2000

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29DS323DT120WHK相关器件

型号	品牌	获取价格	描述	数据表
AM29DS323DT120WMF	SPANSION	获取价格	Flash, 2MX16, 120ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29DS323DT120WMI	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DT120WMI	SPANSION	获取价格	Flash, 2MX16, 120ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48
AM29DS323DT120WMIN	SPANSION	获取价格	Flash, 2MX16, 120ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, FBGA-48
AM29DS323DT120WMIN	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DT50EI	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DT50EIN	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DT50WMI	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323DT50WMIN	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Mem
AM29DS323GB120EE	SPANSION	获取价格	Flash, 2MX16, 120ns, PDSO48, MO-142DD, TSOP-48

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