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AM29DS323DT120WMF PDF预览

AM29DS323DT120WMF

更新时间: 2024-11-19 19:58:47
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路闪存
页数 文件大小 规格书
57页 999K
描述
Flash, 2MX16, 120ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48

AM29DS323DT120WMF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.73最长访问时间:120 ns
其他特性:TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:12 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2 V
编程电压:1.8 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

AM29DS323DT120WMF 数据手册

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Publication Number 23480 Revision A Amendment +4 Issue Date January 25, 2005  

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