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AM29DL163DT90PCI PDF预览

AM29DL163DT90PCI

更新时间: 2024-10-28 21:14:59
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路闪存
页数 文件大小 规格书
57页 1243K
描述
Flash, 1MX16, 90ns, PBGA64, 13 X 11 MM, 1.0 MM PITCH, FBGA-64

AM29DL163DT90PCI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:13 X 11 MM, 1.0 MM PITCH, FBGA-64
针数:64Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:90 ns
其他特性:TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B64JESD-609代码:e0
长度:13 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,31端子数量:64
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.4 mm
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.045 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:11 mm
Base Number Matches:1

AM29DL163DT90PCI 数据手册

 浏览型号AM29DL163DT90PCI的Datasheet PDF文件第2页浏览型号AM29DL163DT90PCI的Datasheet PDF文件第3页浏览型号AM29DL163DT90PCI的Datasheet PDF文件第4页浏览型号AM29DL163DT90PCI的Datasheet PDF文件第6页浏览型号AM29DL163DT90PCI的Datasheet PDF文件第7页浏览型号AM29DL163DT90PCI的Datasheet PDF文件第8页 
D A T A S H E E T  
TABLE OF CONTENTS  
Sector Erase Command Sequence ..............................................27  
Erase Suspend/Erase Resume Commands ................................28  
Figure 4. Erase Operation .................................................................... 28  
Command Definitions ................................................................... 29  
Table 14. Am29DL16xD Command Definitions .................................... 29  
Write Operation Status . . . . . . . . . . . . . . . . . . . . 30  
DQ7: Data# Polling ......................................................................30  
Figure 5. Data# Polling Algorithm......................................................... 30  
RY/BY#: Ready/Busy# ................................................................. 31  
DQ6: Toggle Bit I ..........................................................................31  
Figure 6. Toggle Bit Algorithm .............................................................. 31  
DQ2: Toggle Bit II .........................................................................32  
Reading Toggle Bits DQ6/DQ2 ....................................................32  
DQ5: Exceeded Timing Limits ......................................................32  
DQ3: Sector Erase Timer .............................................................32  
Table 15. Write Operation Status ......................................................... 33  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 34  
Figure 7. Maximum Negative Overshoot Waveform............................. 34  
Figure 8. Maximum Positive Overshoot Waveform ............................. 34  
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 34  
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6  
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 7  
Special Package Handling Instructions ..........................................9  
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 11  
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 12  
Table 1. Am29DL16xD Device Bus Operations ....................................12  
Word/Byte Configuration .............................................................. 12  
Requirements for Reading Array Data .........................................12  
Writing Commands/Command Sequences ..................................13  
Accelerated Program Operation ...............................................13  
Autoselect Functions .................................................................13  
Simultaneous Read/Write Operations with Zero Latency ............13  
Standby Mode .............................................................................. 13  
Automatic Sleep Mode .................................................................13  
RESET#: Hardware Reset Pin .....................................................14  
Output Disable Mode ...................................................................14  
Table 2. Am29DL16xD Device Bank Divisions .....................................14  
Table 3. Sector Addresses for Top Boot Sector Devices ......................15  
Table 4. Secured SiliconSector Addresses for Top Boot Devices... 15  
Table 5. Sector Addresses for Bottom Boot Sector Devices .................16  
Table 6. Secured SiliconAddresses for Bottom Boot Devices......... 16  
Autoselect Mode .......................................................................... 17  
Table 7. Am29DL16xD Autoselect Codes, (High Voltage Method) ......17  
Sector/Sector Block Protection and Unprotection ........................ 18  
Table 8. Top Boot Sector/Sector Block Addresses  
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35  
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic  
Sleep Currents)..................................................................................... 36  
Figure 10. Typical ICC1 vs. Frequency................................................... 36  
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 37  
Figure 11. Test Setup .......................................................................... 37  
Table 16. Test Specifications ................................................................ 37  
Key To Switching Waveforms ......................................................37  
Figure 12. Input Waveforms and Measurement Levels........................ 37  
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38  
Figure 13. Read Operation Timings...................................................... 38  
Figure 14. Reset Timings...................................................................... 39  
Word/Byte Configuration (BYTE#) ...............................................40  
Figure 15. BYTE# Timings for Read Operations .................................. 40  
Figure 16. BYTE# Timings for Write Operations .................................. 40  
Erase and Program Operations ...................................................41  
Figure 17. Program Operation Timings ................................................ 42  
Figure 18. Accelerated Program Timing Diagram ................................ 42  
Figure 19. Chip/Sector Erase Operation Timings................................. 43  
Figure 20. Back-to-back Read/Write Cycle Timings............................. 44  
Figure 21. Data# Polling Timings (During Embedded Algorithms) ....... 44  
Figure 22. Toggle Bit Timings (During Embedded Algorithms) ............ 45  
Figure 23. DQ2 vs. DQ6 ....................................................................... 45  
Temporary Sector/Sector Block Unprotect ...................................46  
Figure 24. Temporary Sector/Sector Block Unprotect Timing Diagram 46  
Figure 25. Sector/Sector Block Protect and Unprotect Timing Diagram 47  
Alternate CE# Controlled Erase and Program Operations ...........48  
Figure 26. Alternate CE# Controlled Write (Erase/Program)  
for Protection/Unprotection ...................................................................18  
Table 9. Bottom Boot Sector/Sector Block Addresses  
for Protection/Unprotection ...................................................................18  
Write Protect (WP#) .....................................................................19  
Temporary Sector/Sector Block Unprotect ...................................19  
Figure 1. Temporary Sector Unprotect Operation................................. 19  
Figure 2. In-System Sector/Sector Block Protection and  
Unprotection Algorithms........................................................................ 20  
Secured Silicon Sector Flash Memory Region .............................21  
Factory Locked: Secured Silicon Sector Programmed and  
Protected At the Factory ...........................................................21  
Customer Lockable: Secured Silicon Sector NOT Programmed or  
Protected At the Factory ...........................................................21  
Hardware Data Protection ............................................................21  
Low VCC Write Inhibit ...............................................................22  
Write Pulse “Glitch” Protection ..................................................22  
Logical Inhibit ............................................................................22  
Power-Up Write Inhibit ..............................................................22  
Common Flash Memory Interface (CFI) . . . . . . . 22  
Table 10. CFI Query Identification String.............................................. 22  
Table 11. System Interface String......................................................... 23  
Table 12. Device Geometry Definition .................................................. 23  
Table 13. Primary Vendor-Specific Extended Query ............................ 24  
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25  
Reading Array Data ......................................................................25  
Reset Command ..........................................................................25  
Autoselect Command Sequence ..................................................25  
Enter Secured SiliconSector/Exit Secured Silicon Sector Com-  
mand Sequence ...........................................................................26  
Byte/Word Program Command Sequence ...................................26  
Unlock Bypass Command Sequence .......................................26  
Figure 3. Program Operation ................................................................ 27  
Chip Erase Command Sequence .................................................27  
Operation Timings ................................................................................ 49  
Erase And Programming Performance . . . . . . . 50  
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 50  
Package and Pin Capacitance . . . . . . . . . . . . . . . 50  
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50  
FBC048—48-Ball Fine-Pitch Ball Grid Array  
8 x 9 mm package ........................................................................51  
LAA064—64-Ball Fortified Ball Grid Array,  
13 x 11 mm package ....................................................................52  
TS 048—48-Pin Standard TSOP .................................................53  
VBF048—48-Ball Very Thin Profile Fine-Pitch Ball Grid Array ....54  
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 55  
February 26, 2009 21533E6  
Am29DL16xD  
5

与AM29DL163DT90PCI相关器件

型号 品牌 获取价格 描述 数据表
AM29DL163DT90VRF AMD

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16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT90VRF SPANSION

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Flash, 1MX16, 90ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, LEAD FREE, VBGA-48
AM29DL163DT90VRI AMD

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16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT90WCF AMD

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16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT90WCF SPANSION

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Flash, 1MX16, 90ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29DL163DT90WCI SPANSION

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Flash, 1MX16, 90ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48
AM29DL163DT90WCI AMD

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16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT90WCIN ETC

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x8/x16 Flash EEPROM
AM29DL163DT90ZF SPANSION

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Flash, 2MX8, 90ns, PDSO56, MO-180BA, SSOP-56
AM29DL163DT90ZI SPANSION

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Flash, 2MX8, 90ns, PDSO56, MO-180BA, SSOP-56